preliminary n otice: this is not a final specification. some parametric limits are subject to change. mar. 2001 mitsubishi hvigbt modules CM800HA-66H high power switching use insulated type i c ................................................................... 800a v ces ....................................................... 3300v insulated type 1-element in a pack application inverters, converters, dc choppers, induction heating, dc to dc converters. CM800HA-66H hvigbt modules (high voltage insulated gate bipolar transistor modules) outline drawing & circuit diagram dimensions in mm 3 - m4 nuts 4 - m8 nuts c e cm e c c 20 40 124 0.25 140 114 57 0.25 57 0.25 130 5 38 18 61.5 5.2 40 15 30 28 48.8 10.65 10.35 6 - 7 mounting holes g e e g c ec circuit diagram label hvigbt (high voltage insulated gate bipolar transistor) modules
preliminary n otice: this is not a final specification. some parametric limits are subject to change. mar. 2001 mitsubishi hvigbt modules CM800HA-66H high power switching use insulated type hvigbt modules (high voltage insulated gate bipolar transistor modules) maximum ratings (tj = 25 c) collector-emitter voltage gate-emitter voltage maximum collector dissipation junction temperature storage temperature isolation voltage mounting torque mass v ge = 0 v ce = 0 t c = 25 c pulse (note 1) t c = 25 c pulse (note 1) t c = 25 c, igbt part charged part to base plate, rms, sinusoidal, ac 60hz 1min. main terminals screw m8 mounting screw m6 auxiliary terminals screw m4 typical value collector current emitter current 3300 20 800 1600 800 1600 6900 ?0 ~ +150 ?0 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 symbol item conditions unit ratings v v a a a a w c c v n m n m n m kg v ces v ges i c i cm i e (note 2) i em (note 2) p c (note 3) t j t stg v iso v v v ce = v ces , v ge = 0v v ge = v ges , v ce = 0v t j = 25 c t j = 125 c v cc = 1650v, i c = 800a, v ge = 15v v cc = 1650v, i c = 800a v ge1 = v ge2 = 15v r g = 3.75 ? resistive load switching operation i e = 800a, v ge = 0v i e = 800a die / dt = ?600a / s junction to case, igbt part junction to case, fwdi part case to fin, conductive grease applied i c = 80ma, v ce = 10v i c = 800a, v ge = 15v (note 4) v ce = 10v v ge = 0v collector cutoff current gate-emitter threshold voltage gate-leakage current collector-emitter saturation voltage input capacitance output capacitance reverse transfer capacitance total gate charge turn-on delay time turn-on rise time turn-off delay time turn-off fall time emitter-collector voltage reverse recovery time reverse recovery charge contact thermal resistance min typ max 10 0.5 5.72 1.60 2.00 2.50 1.00 4.29 1.20 0.018 0.036 ma a nf nf nf c s s s s v s c k/w k/w k/w 4.40 4.80 80 8.0 2.4 3.8 3.30 200 0.008 i ces i ges c ies c oes c res q g t d (on) t r t d (off) t f v ec (note 2) t rr (note 2) q rr (note 2) r th(j-c)q r th(j-c)r r th(c-f) symbol item conditions v ge(th) v ce(sat) limits unit 6.0 4.5 note 1. pulse width and repetition rate should be such that the device junction temp. (t j ) does not exceed t jmax rating. 2. i e , v ec , t rr , q rr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. 3. junction temperature (t j ) should not increase beyond 150 c. 4. pulse width and repetition rate should be such as to cause negligible temperature rise. 7.5 thermal resistance electrical characteristics (tj = 25 c) hvigbt (high voltage insulated gate bipolar transistor) modules
preliminary n otice: this is not a final specification. some parametric limits are subject to change. mar. 2001 mitsubishi hvigbt modules CM800HA-66H high power switching use insulated type hvigbt (high voltage insulated gate bipolar transistor) modules performance curves output characteristics ( typical ) collector current i c ( a ) transfer characteristics ( typical ) collector current i c ( a ) gate-emitter voltage v ge ( v ) collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) collector-emitter saturation voltage characteristics ( typical ) free-wheel diode forward characteristics ( typical ) emitter current i e ( a ) emitter-collector voltage v ec ( v ) 1600 800 400 0 10 0 2468 1200 t j =25 c v ge =13v v ge =12v v ge =11v v ge =10v v ge =9v v ge =8v v ge =7v v ge =14v v ge =15v v ge =20v 0 8 6 4 2 0 400 800 1200 1600 v ge =15v t j = 25 c t j = 125 c 1600 800 400 0 1200 05 4 3 2 1 10 2 10 4 7 5 3 2 10 3 7 5 3 2 7 5 3 2 10 1 t j =25 c 20 0481216 v ce =10v t j = 25 c t j = 125 c collector-emitter saturation voltage v ce(sat) ( v ) 020 16 12 8 4 10 8 6 4 2 0 collector-emitter saturation voltage v ce(sat) ( v ) gate-emitter voltage v ge ( v ) collector-emitter saturation voltage characteristics ( typical ) t j = 25 c i c = 1600a i c = 800a i c = 320a 10 1 23 10 1 5710 0 23 5710 1 23 5710 2 10 3 7 5 3 2 10 2 7 5 3 2 7 5 3 2 10 0 capacitance vs. v ce ( typical ) capacitance c ies , c oes , c res ( nf ) collector-emitter voltage v ce ( v ) c ies c oes c res v ge = 0v, t j = 25 c c ies, c oes : f = 100khz c res : f = 1mhz
preliminary n otice: this is not a final specification. some parametric limits are subject to change. mar. 2001 mitsubishi hvigbt modules CM800HA-66H high power switching use insulated type hvigbt (high voltage insulated gate bipolar transistor) modules 7 5 3 2 710 2 10 1 7 23 5710 3 23 5 5 5 3 2 10 0 5 7 5 3 2 710 2 10 1 7 23 5710 3 23 5 5 5 3 2 10 0 5 t d(off) v cc = 1650v, v ge = 15v r g = 3.75 ? , t j = 125 c inductive load t d(on) t r t f half-bridge switching characteristics ( typical ) switching times ( s ) collector current i c ( a ) v cc = 1650v, t j = 125 c inductive load v ge = 15v, r g = 3.75 ? t rr i rr reverse recovery characteristics of free-wheel diode ( typical ) reverse recovery time t rr ( s ) emitter current i e ( a ) reverse recovery current i rr ( a ) 7 5 3 2 10 2 7 5 5 3 2 10 3 10 2 10 3 10 2 10 1 10 0 7 5 3 2 10 1 7 5 3 2 10 0 10 1 7 5 3 2 23 57 23 57 23 57 single pulse t c = 25 c r th(j c) = 0.018k/ w transient thermal impedance characteristics ( igbt part ) normalized transient thermal impedance z th(j c) time ( s ) 10 2 10 3 10 2 10 1 10 0 7 5 3 2 10 1 7 5 3 2 10 0 10 1 7 5 3 2 23 57 23 57 23 57 single pulse t c = 25 c r th(j c) = 0.036k/ w normalized transient thermal impedance z th(j c) time ( s ) transient thermal impedance characteristics ( fwdi part ) 20 16 12 8 4 0 4000 5000 3000 0 1000 2000 v ge ?gate charge ( typical ) gate-emitter voltage v ge ( v ) gate charge q g ( nc ) v cc = 1650v i c = 800a
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